- 건국대학교

	Research Team of Prof. Hyun Jong Chung Develops Field Effect Transistor Beyond Limitations of Semiconductor
	관리자		730		2021.02.15

Professor Hyun Jong Chung’s research team from Department of Physics at Konkuk University developed a next-generation Field Effect Transistor (FET) that has high current control ratio without a semiconductor essential by using ‘Graphene’, two-dimensional metal and ‘h-BN (hexagonal Boron Nitride)’, an insulator material that does not conduct electricity. (Thesis title: Semiconductor-less Vertical Transistor with ION/IOFF of 10<sup style="word-spacing: 0px; orphans: 2; widows: 2; -webkit-text-stroke-width: 0px; font-variant-ligatures: normal; font-variant-caps: normal; text-decoration-thickness: initial; text-decoration-style: initial; text-decoration-color: initial;">6<span style="word-spacing: 0px; float: none; orphans: 2; widows: 2; -webkit-text-stroke-width: 0px; font-variant-ligatures: normal; font-variant-caps: normal; text-decoration-thickness: initial; text-decoration-style: initial; text-decoration-color: initial;">)
 　　　　　　　　　<img width="212" height="280" alt="" src="ArticleFile.do?id=11812943" />  <img alt="" src="ArticleFile.do?id=11812944" /> The research supported by National Research Foundation (Ministry of Science and ICT) and Samsung Research Funding & Incubation Center for Future Technology is approved to be published in Nature Communications (IF 12.121), an international journal specializing in natural science. 
A Field Effect Transistor (FET), also called Unipolar Transistor, is a device that enables the voltage applied to the gate to control the current flowing through the semiconductor.
 
In contrast with conventional semiconductor-based transistors, non-semiconductor-based transistors developed by the research team maintained a high current control ratio (ION/IOFF=106), regardless of temperature changes.
 
Graphene, WS2, MoS2 and hBN are two-dimensional substances with a single layer of atoms in a nanometer. Since the substances are thin, well-curved and sturdy, there has been an ongoing research to apply them to not only semiconductors but also solar cells and displays.
 
WS2 and MoS2, which show characteristics of semiconductors among two-dimensional substances, are expected to be next-generation semiconductor substances that will overcome the limitation of integration level of silicon for their thin thickness and high current control ratio. Due to the characteristics of semiconductor whose conductivity varies depending on temperature, the electronic devices that use these substances have drawbacks; high dependency on current-voltage or temperature of the device.
 
In order to overcome the limitation of integration level of three-dimensional substances and solve the temperature dependence of semiconductor-based electronic devices, the research team created Field-emission Barristor by using Graphene and hBN, and confirmed that the features of current-voltage do not change from -258 degrees to 127 degrees.
 
The new electronic device named Field-emission Barristor manages the energy of an electron with the gate voltage and controls the height of tunneling barrier formed in between Graphene and hBN. Accordingly, it controls the current flowing in the device by regulating the level of field-emission. The current generated by field-emission does not change depending on current-voltage or temperature of a device since it is not affected by temperature.
 
Professor Chung said, “The technology developed in this research will overcome the limitation of semiconductor substance in a way of implementing distinctive electronic devices opearting at a wide range of temperatures,” adding, “In particular, the research suggested the possibility of developing new features that cannot be implemented with existing semiconductor devices such as sensors that operate in extreme environments.”
 
The research was jointly conducted by the leading researcher, professor Hyun Jong Chung from Department of Physics (corresponding author), researcher Joon Ho Lee (co-first author), Dr. Dong Hoon Shin from Department of Physics at Ewha Womans University (co-first author) and professor Hee Joon Yang from Department of Physics at KAIST (co-first author).
 
*Barristor: A compound word of barrier and transistor, and is a newly coined term by a research manager from Samsung Advanced Institute of Technology in 2012. Commonly refers to a device that switches current by controlling the energy of an electron in graphene, and regulating the barrier between graphene-semiconductor or graphene-insulator.
 
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